3D Detector Activities: Difference between revisions
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* One can achieve very high radiation hardness | * One can achieve very high radiation hardness | ||
* Very fast | * Very fast | ||
* Active almost to the edge | * Active almost to the edge | ||
Schematic drawings of the 3D detector: | Schematic drawings of the 3D detector: | ||
[[Image:3D_drawing1.png|frameless|250px]] [[Image:3D_drawing2.png|frameless|250px]] | [[Image:3D_drawing1.png|frameless|250px]] [[Image:3D_drawing2.png|frameless|250px]] | ||
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* [[TestBeam Analysis]] | * [[TestBeam Analysis]] | ||
* 3DSensor Characteristics | * 3DSensor Characteristics | ||
* 3DMeasurement System | * 3DMeasurement System | ||
== Who are we? == | == Who are we? == | ||
* In Bergen: Bjarne, Heidi, Kristine, Ahmed ... | * In Bergen: Bjarne, Heidi, Kristine, Ahmed ... | ||
[[Category:Detector lab]] |
Revision as of 10:21, 20 February 2009
Introduction to 3D detectors
3D detectors have three dimensional electrods going through the silicon substrate. The depletion thickness depends on p+ and n+ electrode distance. The advantages with 3D technology is:
- It can operate at very low voltages
- One can achieve very high radiation hardness
- Very fast
- Active almost to the edge
Schematic drawings of the 3D detector:
More information
- Testbeam talk by Erlend and Ole
- 3D workshop in Barcelona
- 3D-state of the art
- 3D proposal by S.I. Parker C.J. Kenneyand and J. Segal (NIMA395(1997)328)]
Our Activities
- TestBeam Analysis
- 3DSensor Characteristics
- 3DMeasurement System
Who are we?
- In Bergen: Bjarne, Heidi, Kristine, Ahmed ...